Samsung Rejects Hanmi's HBM4 Bonder, Sticking with In-House TC-NCF Process

Samsung will reportedly not adopt Hanmi Semiconductor's TC-bonders for its next-generation HBM4 memory, instead continuing with its own TC-NCF process.

This decision is credible because Samsung's affiliate SEMES already supplies these tools, and a recent JEDEC standard change keeps the TC-NCF method competitive.

This news eliminates a major potential order for Hanmi, shifting the focus to its business with Micron and its market share at SK hynix, which is also diversifying suppliers.

A recent report suggests Samsung Electronics will continue using its own TC-NCF process for HBM4, bypassing Hanmi Semiconductor’s widely-used MR-MUF equipment.

This development is significant because it pours cold water on persistent market rumors that Samsung was preparing to place a massive order for around 200 of Hanmi’s dual TC-bonders. Such a deal, valued at an estimated ₩800 billion, would have represented a nearly 43% upside to Hanmi's 2024 revenue. The market’s relatively muted reaction, with Hanmi’s stock dipping only slightly, indicates that much of this speculation was already seen as a long shot, and the news served more as a confirmation.

So, why is Samsung’s decision to stick with its in-house technology a credible path? There are three key reasons. First, Samsung’s own affiliate, SEMES, has been mass-producing TC-bonders optimized for the TC-NCF method since 2024, giving Samsung a reliable internal supply chain. Second, the industry standards body, JEDEC, relaxed the height requirements for HBM4 stacks in 2025. This change made the TC-NCF process perfectly viable for the next generation of 16-layer HBM, reducing the immediate pressure to switch to alternative methods like MR-MUF or the more advanced hybrid bonding. Third, Samsung successfully passed Nvidia's quality tests for its HBM3E memory, proving its existing process is competitive and reliable.

This decision also reflects the broader competitive landscape. SK hynix, the current HBM market leader, has been actively diversifying its equipment suppliers away from Hanmi, its primary partner, partly due to ongoing patent disputes. This created pressure on Hanmi to secure a new major customer like Samsung or Micron to offset any potential loss of business. The latest news suggests the Samsung opportunity is now off the table for the near future.

Ultimately, Samsung’s choice signals confidence in its proprietary technology and in-house capabilities. For Hanmi Semiconductor, the path forward now centers on retaining its share at SK hynix against new rivals and capitalizing on opportunities with other memory makers like Micron. While the overall demand for HBM equipment remains strong due to the AI boom, this event underscores that the spoils will not be distributed evenly.

HBM (High Bandwidth Memory): A high-performance memory standard that involves vertically stacking memory chips to achieve faster data transfer speeds, crucial for AI and high-performance computing.
TC-NCF (Thermo-Compression with Non-Conductive Film): A semiconductor packaging method where a non-conductive film is placed between stacked chips before they are bonded using heat and pressure. It is primarily used by Samsung and Micron.
MR-MUF (Mass Reflow Molded Underfill): An alternative packaging process where a liquid encapsulant fills the gaps between stacked chips simultaneously. It is known for its excellent heat dissipation and is a key part of SK hynix's HBM manufacturing process.

Samsung Rejects Hanmi's HBM4 Bonder, Sticking with In-House TC-NCF Process

Samsung will reportedly not adopt Hanmi Semiconductor's TC-bonders for its next-generation HBM4 memory, instead continuing with its own TC-NCF process.

This decision is credible because Samsung's affiliate SEMES already supplies these tools, and a recent JEDEC standard change keeps the TC-NCF method competitive.

This news eliminates a major potential order for Hanmi, shifting the focus to its business with Micron and its market share at SK hynix, which is also diversifying suppliers.

A recent report suggests Samsung Electronics will continue using its own TC-NCF process for HBM4, bypassing Hanmi Semiconductor’s widely-used MR-MUF equipment.

HBM (High Bandwidth Memory): A high-performance memory standard that involves vertically stacking memory chips to achieve faster data transfer speeds, crucial for AI and high-performance computing.
TC-NCF (Thermo-Compression with Non-Conductive Film): A semiconductor packaging method where a non-conductive film is placed between stacked chips before they are bonded using heat and pressure. It is primarily used by Samsung and Micron.
MR-MUF (Mass Reflow Molded Underfill): An alternative packaging process where a liquid encapsulant fills the gaps between stacked chips simultaneously. It is known for its excellent heat dissipation and is a key part of SK hynix's HBM manufacturing process.